GENERAL DESCRIPTION
ALD110814/ALD110914 are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110814/ALD110914 MOSFETs are designed and built with exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. Each device is versatile as a circuit element and is a useful design component for a broad range of analog applications. They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused). All other pins must have voltages within these voltage limits.
The ALD110814/ALD110914 devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +1.5V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD110814/ALD110914 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +1.4V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 10mV
• High input impedance — 1012W typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
Click to view :
ALD110814.pdf
