GAL  -  Series DataSheet
GAL18V10B-7LJ1  -  High Performance E2CMOS PLD Generic Array Logic  -  Lattice Semiconductor Corporation  -  GAL

Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 7.5 ns Maximum Propagation Delay
— Fmax = 111 MHz
— 5.5 ns Maximum from Clock Input to Data Output
— TTL Compatible 16 mA Outputs
— UltraMOS® Advanced CMOS Technology
• LOW POWER CMOS
— 75 mA Typical Icc
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
— Uses Standard 22V10 Macrocell Architecture
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION

Description
The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.
By building on the popular 22V10 architecture, the GAL18V10 eliminates the learning curve usually associated with using a new device architecture. The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. The GAL18V10 OLMC is fully compatible with the OLMC in standard bipolar and CMOS 22V10 devices.
Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.