Typical Applications
?? Electric Power Steering (EPS)
?? Anti-lock Braking System (ABS)
?? Wiper Control
?? Climate Control
?? Power Door
Benefits
?? Advanced Process Technology
?? Ultra Low On-Resistance
?? Dynamic dv/dt Rating
?? 175°C Operating Temperature
?? Fast Switching
?? Repetitive Avalanche Allowed up to Tjmax
Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Click to view :
IRF1405S.pdf
