IRF-2  -  Series DataSheet
IRF6795MTRPBF  -  A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance.  -  International Rectifier  -  Discrete HEXFET Power MOSFET

RoHs Compliant Containing No Lead and Bromide


Integrated Monolithic Schottky Diode

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible


Ultra Low Package Inductance

Optimized for High Frequency Switching


Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter


Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques


100% Rg tested

Description
The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6795MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6795MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets.