NPN Epitaxial Silicon Transistor • Collector-Base Voltage : VCBO=300V • Current Gain Bandwidth Product : fT=50MHz (TYP.) Symbol Parameter Ratings Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current 100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ +150 °C