LF-3  -  Series DataSheet
LF356M  -  JFET Input Operational Amplifiers  -  National Semiconductor Corporation  -  General Purpose

General Description
These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology).
These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features
Advantages
n Replace expensive hybrid and module FET op amps
n Rugged JFETs allow blow-out free handling compared with MOSFET input devices
n Excellent for low noise applications using either high or low source impedance—very low 1/f corner
n Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
n New output stage allows use of large capacitive loads (5,000 pF) without stability problems
n Internal compensation and large differential input voltage capability

Applications
n Precision high speed integrators
n Fast D/A and A/D converters
n High impedance buffers
n Wideband, low noise, low drift amplifiers
n Logarithmic amplifiers
n Photocell amplifiers
n Sample and Hold circuits

Common Features
n Low input bias current: 30pA
n Low Input Offset Current: 3pA
n High input impedance: 1012W
n Low input noise current:
n High common-mode rejection ratio: 100 dB
n Large dc voltage gain: 106 dB