W98  -  Series DataSheet
W9816G6IH-6I  -  166MHz/CL3;512K × 2 BANKS × 16 BITS SDRAM  -  Winbond Electronics Corp  -  Memory SDRAM

GENERAL DESCRIPTION
W9816G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words × 2 banks × 16 bits. W9816G6IH delivers a data bandwidth of up to 200M words per second (-5). For different applications the W9816G6IH is sorted into the following speed grades: -5/-6/-7/-6I and -7I. The -5 parts can run up to 200MHz/CL3 or 143MHz/CL2. The -6/-6I parts can run up to 166MHz/CL3 (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -7/-7I parts can run up to 143MHz/CL3 (the -7I grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9816G6IH is ideal for main memory in high performance applications.
 FEATURES
2.7V~3.6V power supply for -7/-7I speed grades
3.3V ± 0.3V power supply for -5/-6/-6I speed grades
524,288 words x 2 banks x 16 bits organization
Self Refresh current: standard and low power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Auto-precharge and Controlled Precharge
4K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant